CXMT targets DDR5 DRAM leap with 4F² tech before Samsung

China’s CXMT says it’ll launch a DDR5 server memory module using next-gen 4F² cell architecture by the end of 2026—about two years ahead of Samsung’s roadmap. 4F² stacks DRAM components vertically, shrinking each cell’s footprint by a third and hiking chip density by up to 50%. CXMT is using advanced materials to tackle the manufacturing challenges, but early versions may use a hybrid approach.

• CXMT promises 4F² DDR5 server memory by 2026
• Beats Samsung’s projected 2028 release by two years
• 4F² design shrinks memory cells for higher density
• Up to 50% more DRAM per chip possible
• CXMT using advanced materials to enable this shift