Researchers achieve precise growth of 2D semiconductors
A team from KAIST, TDS Innovation, and Korean universities has developed a method for reliably placing the starting point of two-dimensional semiconductor crystals, making it possible to control exactly where ultrathin materials form on a surface. This technique uses a specific flow of etching chemicals to fix the nucleation site for each crystal, overcoming a key randomness in how these materials have been grown until now.
- Method sets exact crystal locations on a surface
- Etching chemical flow enables precise control
- Overcomes randomness in typical 2D material growth
- Research from KAIST, TDS Innovation, Hanyang, and UNIST
Sources covering this
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