Scientists enable ultrathin dielectrics on 2D semiconductors

Researchers from UIUC and partner labs have figured out how to add extremely thin, high-performance insulating layers—known as high-κ dielectrics—onto 2D semiconductor materials by using a monolayer of carbon dots. This van der Waals interface lets them deposit these oxides without damaging the fragile 2D material, sidestepping a long-standing barrier in chip science. The findings were published in Nature Communications.

• Developed atomically thin carbon-dot interfacial layer
• Enables ultrathin high-κ oxide deposition on 2D semiconductors
• Addresses damage issues with direct oxide growth
• Work published by major U.S. and Australian labs