Researchers advance zinc oxide spin qubit technology

A team from Tohoku University and collaborators has demonstrated techniques for charge sensing and fast readout in a zinc oxide (ZnO) quantum device, successfully forming a double quantum dot that can trap individual electrons. This establishes key tools for developing semiconductor spin qubits in ZnO, a material with properties that may improve quantum computing performance. Faster detection of electron charge was achieved using an integrated sensor and radio-frequency circuit.

• Team demonstrated charge sensing in ZnO quantum dots
• High-frequency reflectometry enabled faster charge detection
• Formed few-electron double quantum dot in device
• ZnO offers low nuclear spin, aiding spin preservation
• Researchers plan to demonstrate spin readout and manipulation